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CTKG100N10DF5 100V/100A N-Channel Power MOSFET | Product Details
CTKG100N10DF5 100V/100A
PDFN5X6-8L N-Channel Split-Gate Power MOSFET
Mass Production | Automotive-Grade Screening
CTKG100N10DF5 is a high-current N-channel power MOSFET designed for medium-voltage high-power conversion and load control circuits. It balances ultra-low conduction resistance with optimized switching performance. Every unit undergoes 100% UIS avalanche and Vds dynamic voltage screening, ensuring stable electrical performance and superior surge immunity for consumer energy storage, power tools, industrial control, and automotive auxiliary power equipment. Housed in a compact PDFN5×6-8L surface-mount package, it serves as a reliable drop-in replacement for imported power MOSFETs.
Core Electrical Specifications
Absolute Maximum Ratings (TJ=25°C)
| Drain-Source Voltage VDS | 100V | Gate-Source Voltage VGS | ±20V |
| Continuous Drain Current ID | 100A (TC=25°C) ; 60A (TC=100°C) |
Pulsed Drain Current IDM | 400A |
| Single Pulse Avalanche Energy EAS | 144mJ | Power Dissipation PD | 147W |
| Junction-to-Case RθJC | 0.85 °C/W | Operating & Storage Temp | -55°C ~ 150°C |
Key Features
RDS(on) typ. 6.5mΩ (VGS=10V)
Qg only 29nC, low Miller charge
ton=8.4ns, toff=27ns
Body diode trr=45ns, Qrr=53nC
Key Electrical Characteristics (TJ=25°C
PDFN5×6-8L Package Advantages
Multi-pin parallel current distribution - Four paralleled D pins on top, S pins on bottom reduce parasitic inductance and solder joint heating.
Large exposed thermal pad - Full-size bottom pad with RθJC=0.85°C/W, direct heat transfer to PCB.
Anti-reverse mounting - PIN1 dot marker prevents SMT misplacement.
Universal industry footprint - Standard PDFN5×6-8L pad layout, drop-in replacement for competing parts.
SMT-friendly - Compatible with high-speed pick-and-place, excellent reflow yield.
Factory Reliability Screening
CTKG100N10DF5 undergoes 100% inspection for two critical tests:
UIS (Unclamped Inductive Switching) - verifies single-pulse avalanche energy tolerance against inductive kickback.
ΔVds dynamic voltage stress - screens latent dielectric defects to prevent mid-life breakdown.
EAS up to 144mJ ensures robust transient surge immunity, extending equipment MTBF.
Main Application Scenarios
Load Switch Circuits
Portable power station / Li-ion PACK main switches
Multi-port PD fast charger power path
BMS overcurrent / short-circuit protection
Hot-swap industrial control boards
PWM High-Frequency Conversion
Synchronous Buck/Boost DC-DC converters
PV energy storage inverters
BLDC motor low-side drives
Servo drivers
Industrial & Automotive Power
AC-DC industrial / communication power supplies
Automotive low-voltage auxiliary distribution
UPS backup power loops
High-power LED drivers / welding auxiliary
Order & Packaging Information
Stable mass production, cost-effective alternative to other brand MOSFETs.
Product Selection Summary
CTKG100N10DF5 integrates 100V withstand voltage, 100A continuous current, 6.5mΩ ultra-low on-resistance, and Split-Gate trench technology, combined with a thermally optimized PDFN5×6-8L package and 100% reliability screening. For hardware engineers, it resolves core pain points such as excessive heating, surge weakness, and PCB space constraints. For procurement, standardized packaging, pin-compatible replacement, and stable delivery streamline supply chain and reduce BOM costs. The preferred high-performance N-channel power MOSFET for mass-produced consumer energy storage, power tools, industrial control, and automotive power equipment.
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