PDFN5 MOSFET

PDFN5 MOSFET
Details:
For the PDFN5*6-8L series, CTK highlights the design reason behind this package: larger DFN-style power package with stronger thermal capacity and lower resistance focus. This page is meant for engineers checking thermal planning, board constraints, and sourcing continuity
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Description
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CTKG100N10DF5 100V/100A N-Channel Power MOSFET | Product Details

CTKG100N10DF5 100V/100A

PDFN5X6-8L N-Channel Split-Gate Power MOSFET
Mass Production | Automotive-Grade Screening

CTKG100N10DF5 is a high-current N-channel power MOSFET designed for medium-voltage high-power conversion and load control circuits. It balances ultra-low conduction resistance with optimized switching performance. Every unit undergoes 100% UIS avalanche and Vds dynamic voltage screening, ensuring stable electrical performance and superior surge immunity for consumer energy storage, power tools, industrial control, and automotive auxiliary power equipment. Housed in a compact PDFN5×6-8L surface-mount package, it serves as a reliable drop-in replacement for imported power MOSFETs.

pdfn5 mosfet 100A 100V

 

Core Electrical Specifications
Absolute Maximum Ratings (TJ=25°C)
Drain-Source Voltage VDS100V
Gate-Source Voltage VGS±20V
Continuous Drain Current ID100A (TC=25°C) ; 60A (TC=100°C)
Pulsed Drain Current IDM400A
Single Pulse Avalanche Energy EAS144mJ
Power Dissipation PD147W
Junction-to-Case RθJC0.85 °C/W
Operating & Storage Temp-55°C ~ 150°C
Key Features
  • RDS(on) typ. 6.5mΩ (VGS=10V)
  • Qg only 29nC, low Miller charge
  • ton=8.4ns, toff=27ns
  • Body diode trr=45ns, Qrr=53nC
Key Electrical Characteristics (TJ=25°C)
Conduction Performance: Typical RDS(on)=6.5mΩ (max 8.4mΩ) @ VGS=10V, ID=30A. Low on-resistance cuts power loss significantly under sustained heavy current.
Dynamic Switching: Total gate charge Qg=29nC, Miller charge Qgd=8.4nC. Turn-on delay 8.4ns, rise 9.4ns; turn-off delay 27ns, fall 18ns.
Body Diode: Continuous 100A forward current, trr=45ns, Qrr=53nC – eliminates external Schottky.
Breakdown & Leakage: V(BR)DSS ≥100V; IDSS ≤1mA, gate leakage ≤±100nA.
PDFN5×6-8L Package Advantages
  • Multi-pin parallel current distribution - Four paralleled D pins on top, S pins on bottom reduce parasitic inductance and solder joint heating.
  • Large exposed thermal pad - Full-size bottom pad with RθJC=0.85°C/W, direct heat transfer to PCB.
  • Anti-reverse mounting - PIN1 dot marker prevents SMT misplacement.
  • Universal industry footprint - Standard PDFN5×6-8L pad layout, drop-in replacement for competing parts.
  • SMT-friendly - Compatible with high-speed pick-and-place, excellent reflow yield.
Factory Reliability Screening

CTKG100N10DF5 undergoes 100% inspection for two critical tests:

  • UIS (Unclamped Inductive Switching) - verifies single-pulse avalanche energy tolerance against inductive kickback.
  • ΔVds dynamic voltage stress - screens latent dielectric defects to prevent mid-life breakdown.

EAS up to 144mJ ensures robust transient surge immunity, extending equipment MTBF.

Main Application Scenarios

Load Switch Circuits

  • Portable power station / Li-ion PACK main switches
  • Multi-port PD fast charger power path
  • BMS overcurrent / short-circuit protection
  • Hot-swap industrial control boards

PWM High-Frequency Conversion

  • Synchronous Buck/Boost DC-DC converters
  • PV energy storage inverters
  • BLDC motor low-side drives
  • Servo drivers

Industrial & Automotive Power

  • AC-DC industrial / communication power supplies
  • Automotive low-voltage auxiliary distribution
  • UPS backup power loops
  • High-power LED drivers / welding auxiliary
Order & Packaging Information
Package form:13'' Tape & Reel
Reel quantity:5,000 pcs
Carton quantity:50,000 pcs
Marking:CTKG100N10DF5

Stable mass production, cost-effective alternative to other brand MOSFETs.

Product Selection Summary

CTKG100N10DF5 integrates 100V withstand voltage, 100A continuous current, 6.5mΩ ultra-low on-resistance, and Split-Gate trench technology, combined with a thermally optimized PDFN5×6-8L package and 100% reliability screening. For hardware engineers, it resolves core pain points such as excessive heating, surge weakness, and PCB space constraints. For procurement, standardized packaging, pin-compatible replacement, and stable delivery streamline supply chain and reduce BOM costs. The preferred high-performance N-channel power MOSFET for mass-produced consumer energy storage, power tools, industrial control, and automotive power equipment.

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